AFT23H200-4S2L: 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor

NI-1230-4LS2L Package Image
特性
  • Advanced High Performance In-Package Doherty
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT23H200-4S2LR6 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data Sheet (REV 1) PDF (417.3 kB) AFT23H200-4S2L13 May 2013
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00513D, NI-1230-4LS2L (REV A) PDF (44.6 kB) 98ASA00513D10 Mar 2013
Supporting Information (1)
Name/DescriptionModified Date
Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI01 Jun 2013
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT23H200-4S2LR6Active230024002853.221045 @ AVGW-CDMA15.3 @ 230042.80.32I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230-4L2L98ASA00513DMPQ - 150 REELPOQ - 150 REELActiveAFT23H200-4S2LR6AFT23H200-4S2LR6.pdf260
AFT23H200-4S2LR6 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data Sheet AFT23H200-4S2L
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Airfast® RF Products for TD-LTE Base Stations AFT26P100-4WS
98ASA00513D, NI-1230-4LS2L MMRF1024HS
AFT23H200-4S2LR6.pdf AFT23H200-4S2L