AFT26H200W03S: 2496-2690 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor
NI-1230S-4S Package Image
特性
- Advanced High Performance In-Package Doherty
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction System
- RoHS Compliant
- In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT26H200W03SR6 2496-2690 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (335.7 kB) AFT26H200W03S | 16 Aug 2013 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C | 23 Feb 2016 |
Supporting Information (1)
| Name/Description | Modified Date |
|---|---|
| Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI | 01 Jun 2013 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT26H200W03SR6 | Active | 2496 | 2690 | 28 | 53 | 200 | 45 @ AVG | W-CDMA | 14.1 @ 2496 | 45.2 | 0.46 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230S-4 | 98ARB18247C | MPQ - 150 REELPOQ - 150 BOX | Active | AFT26H200W03SR6 | AFT26H200W03SR6.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- Airfast® RF Products for TD-LTE Base Stations AFT26P100-4WS
- 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- AFT26H200W03SR6.pdf AFT26H200W03S
