AFT26HW050S: 2496-2690 MHz, 9 W Avg., 28 V Airfast® RF Power LDMOS Transistors
NI-780S-4L4S, NI-780GS-4L4L, NI-780S-4L4L Package Image
特性
- Advanced High Performance In-Package Doherty
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction System
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250, 44 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V Airfast® RF Power LDMOS... (REV 2) PDF (772.8 kB) AFT26HW050S | 30 Jul 2013 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (3)
| Name/Description | Modified Date |
|---|---|
| 98ASA00407D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins (REV B) PDF (54.5 kB) 98ASA00407D | 26 Feb 2016 |
| 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins (REV A) PDF (56.1 kB) 98ASA00406D | 15 Feb 2016 |
| 98ASA00581D, NI-780S-4L4L (REV O) PDF (62.4 kB) 98ASA00581D | 09 Apr 2013 |
Supporting Information (1)
| Name/Description | Modified Date |
|---|---|
| Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI | 01 Jun 2013 |
Printed Circuit Boards
- AFT26HW050S PCB DXF file (REV 5) ZIP AFT26HW050S_PCB 5/6/2013
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT26H050W26SR3 | Active | 2496 | 2690 | 28 | 46.2 | 42 | 9 @ AVG | W-CDMA | 14.2 @ 2690 | 47.1 | 0.75 | I/O | AB | LDMOS |
| AFT26HW050SR3 | Active | 2496 | 2690 | 28 | 46.2 | 42 | 9 @ AVG | W-CDMA | 14.2 @ 2690 | 47.1 | 0.75 | I/O | AB, C | LDMOS |
| AFT26HW050GSR3 | Active | 2496 | 2690 | 28 | 46.2 | 42 | 9 @ AVG | W-CDMA | 14.2 @ 2690 | 47.1 | 0.75 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S-8 | 98ASA00406D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT26HW050SR3 | AFT26HW050SR3.pdf |   | 260 |
| NI-780-4S4L GULL | 98ASA00407D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT26HW050GSR3 | AFT26HW050GSR3.pdf | | 260 |
| NI-780S-4L4L | 98ASA00581D | MPQ - 250 REELPOQ - 250 BOX | Active | AFT26H050W26SR3 | AFT26H050W26SR3.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- Airfast® RF Products for TD-LTE Base Stations AFT26P100-4WS
- AFT26HW050S PCB DXF file AFT26HW050S
- 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins AFT26HW050S
- AFT26HW050SR3.pdf AFT26HW050S
- 98ASA00407D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins AFT26HW050S
- AFT26HW050GSR3.pdf AFT26HW050S
- 98ASA00581D, NI-780S-4L4L AFT26HW050S
- AFT26H050W26SR3.pdf AFT26HW050S
