AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor

PLD-1.5W Image
特性
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Universal Broadband Driver
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT27S006NT1 728-3600 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 4) PDF (1.1 MB) AFT27S006N30 Dec 2015
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins (REV A) PDF (55.3 kB) 98ASA00476D15 Feb 2016
Supporting Information (1)
Name/DescriptionModified Date
Two New Cellular Base Station Drivers: AFT27S006N and AFT27S010N (REV 0) PDF (2.8 MB) AIRFAST_6W_10W_DRIVERS_TRN_SI25 Nov 2013
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT27S006NT1Active10036002837.860.76 @ AVGW-CDMA22.5 @ 217020.23.4UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
PLD-1.5W98ASA00476DMPQ - 1000 REELPOQ - 1000 BOXActiveAFT27S006NT1AFT27S006NT1.pdf3260
AFT27S006NT1 728-3600 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet AFT27S006N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Two New Cellular Base Station Drivers: AFT27S006N and AFT27S010N AFT27S010N
AFT27S006N 2100 MHz PCB DXF file AFT27S006N
AFT27S006N 2300 MHz / 2500 MHz PCB DXF file AFT27S006N
AFT27S006N 700 MHz PCB DXF file AFT27S006N
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins aft09ms015n
AFT27S006NT1.pdf AFT27S006N