BLF6G10L-40BRN:功率LDMOS晶体管

40 W LDMOS功率晶体管,适合700 MHz至1 GHz频率范围的基站应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 增强的强度
    • 高效率
    • 极佳的热稳定性
    • 设计用于宽带操作(728 MHz至960 MHz)
    • 内部匹配,便于使用
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
    • 集成式电流感测
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 728 MHz至960 MHz频率范围内的多载波GSM和LTE应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range7001000MHz
PL(1dB)nominal output power at 1 dB gain compression40W
Gppower gainPL(AV) = 2.5 W; VDS = 28 V [0]2223dB
RLininput return lossPL(AV) = 2.5 W; VDS = 28 V; IDq = 390 mA [0]-15-10dB
ηDdrain efficiencyPL(AV) = 2.5 W; VDS = 28 V; 791 MHz ≤ f ≤ 821 MHz; IDq = 390 mA [0]1315%
PL(AV)average output power[0]2.5W
ACPRadjacent channel power ratioPL(AV) = 2.5 W; VDS = 28 V; 791 MHz ≤ f ≤ 821 MHz; IDq = 390 mA [0]-42.5-38dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G10L-40BRN
CDFM6
(SOT1112A)
sot1112a_poReel 13" Q1/T1量产Standard MarkingBLF6G10L-40BRN,118( 9340 642 77118 )
Bulk Pack量产Standard MarkingBLF6G10L-40BRN,112( 9340 642 77112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
4SDsense drain
5SDsense drain
6SGsense gate
7SGsense gate
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G10L-40BRNBLF6G10L-40BRN,118Always Pb-freeNANA
BLF6G10L-40BRNBLF6G10L-40BRN,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF6G10L-40BRN (中文)Power LDMOS transistorData sheetpdf2010-11-16
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF6G10-40BRN_ADS-2009_ModelBLF6G10-40BRN ADS-2009 ModelSimulation modelzip2013-02-28
sot1112a_poflanged ceramic package; 2 mounting holes; 6 leadsOutline drawingpdf2010-04-02
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G10L-40BRN9340 642 77118BLF6G10L-40BRN,118
BLF6G10L-40BRN9340 642 77112BLF6G10L-40BRN,112
模型
标题类型日期
BLF6G10-40BRN ADS-2009 ModelSimulation model2013-02-28
Power LDMOS transistor BLF6G10L-40BRN
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged ceramic package; 2 mounting holes; 6 leads BLF6G27L-50BN
BLF6G10-40BRN ADS-2009 Model BLF6G10L-40BRN