BLF6G22LS-100:功率LDMOS晶体管

100 W LDMOS功率晶体管,适合2000 MHz至2200 MHz频率范围的基站应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 设计用于宽带操作(2000 MHz至2200 MHz)
    • 内部匹配,便于使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 2000 MHz至2200 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range20002200MHz
PL(1dB)nominal output power at 1 dB gain compression100W
Gppower gainPL(AV) = 25 W; VDS = 28 V1718.2dB
RLininput return lossPL(AV) = 25 W; VDS = 28 V; IDq = 950 mA-9-7dB
ηDdrain efficiencyVDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 950 mA27.529%
PL(AV)average output power25W
IMD3third-order intermodulation distortionPL(AV) = 25 W; VDS = 28 V; IDq = 950 mA-37-34.5dBc
ACPRadjacent channel power ratioPL(AV) = 25 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 950 mA-41-38.5dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G22LS-100

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF6G22LS-100,118( 9340 611 29118 )
Bulk Pack量产Standard MarkingBLF6G22LS-100,112( 9340 611 29112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G22LS-100BLF6G22LS-100,118Always Pb-free
BLF6G22LS-100BLF6G22LS-100,112Always Pb-free
文档资料
档案名称标题类型格式日期
BLF6G22LS-100 (中文)Power LDMOS transistorData sheetpdf2010-11-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G22LS-1009340 611 29118BLF6G22LS-100,118
BLF6G22LS-1009340 611 29112BLF6G22LS-100,112
Power LDMOS transistor BLF6G22LS-100
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200