BLF6H10L(S)-160：功率LDMOS晶体管
160 W LDMOS RF功率晶体管用于基站应用。此晶体管可在729 MHz至960 MHz提供160 W。此器件极佳的强度和宽带性能使其成为基站应用的理想选择。
特性和优势
应用
| 产品图片 |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| BLF6H10LS-160 | SOT467B | 729 | 960 | 160 | 50 | 34 | 20 | 2-c WCDMA; 2-c WCDMA | Production |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6H10LS-160 |  (SOT467B) | sot467b_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF6H10LS-160,118( 9340 656 58118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF6H10LS-160,112( 9340 656 58112 ) |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF6H10LS-160 | BLF6H10LS-160,118 |   | Always Pb-free | NA | NA |
| BLF6H10LS-160 | BLF6H10LS-160,112 | | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF6H10L-160_6H10LS-160 (中文) | Power LDMOS transistor | Data sheet | 2012-12-13 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLF6H10L-160_6H10LS-160_Data-sheet | PCB Design BLF6H10L(S)-160 (Data sheet) | Design support | zip | 2012-12-04 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| NXP_RFpower_Lib_V09p0 | RF Power Model Library for Microwave Office® | Simulation model | zip | 2014-11-11 |
| NXP_RFpower_Manual_MWO_20141111 | RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 | |
| NXP_RFPower_Simulation_Example | RF Power Simulation Example for Microwave Office® | Simulation model | zip | 2012-06-11 |
| BLF6H10LS-160_ADS-2009_Model | BLF6H10LS-160 ADS-2009 Model | Simulation model | zip | 2013-06-25 |
| BLF6H10LS-160_ADS-2011_Model | BLF6H10LS-160 ADS-2011 Model | Simulation model | zip | 2014-04-11 |
| sot467b_po | earless ceramic package; 2 leads | Outline drawing | 2012-05-08 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF6H10LS-160 | 9340 656 58118 | BLF6H10LS-160,118 |
| BLF6H10LS-160 | 9340 656 58112 | BLF6H10LS-160,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| RF Power Model Library for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Simulation Example for Microwave Office® | Simulation model | 2012-06-11 |
| BLF6H10LS-160 ADS-2009 Model | Simulation model | 2013-06-25 |
| BLF6H10LS-160 ADS-2011 Model | Simulation model | 2014-04-11 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF6H10L(S)-160 (Data sheet) | Design support | 2012-12-04 |
- Power LDMOS transistor BLF6H10L_S_160
- Power LDMOS transistor BLF6H10L_S_160
- Power LDMOS transistor BLF6H10L_S_160
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless ceramic package; 2 leads CLF1G0035_S_50
- RF Power Model Library for Microwave Office® CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLF6H10LS-160 ADS-2009 Model BLF6H10L_S_160
- BLF6H10LS-160 ADS-2011 Model BLF6H10L_S_160
- PCB Design BLF6H10L(S)-160 (Data sheet) BLF6H10L_S_160
