BLF7G27L-200PB:功率LDMOS晶体管

200 W LDMOS功率晶体管,适合2600 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 针对低内存占用量设计,提供出色的预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 2600 MHz至2700 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range26002700MHz
PL(1dB)nominal output power at 1 dB gain compression200W
Gppower gainVDS = 32 V14.816.517.7dB
RLininput return lossVDS = 32 V; IDq = 1700 mA-15-5dB
ηDdrain efficiencyVDS = 32 V; 2620 MHz ≤ f ≤ 2690 MHz; IDq = 1700 mA25.529%
PL(AV)average output power65W
ACPRadjacent channel power ratioPL(AV) = 65 W; VDS = 32 V; 2620 MHz ≤ f ≤ 2690 MHz; IDq = 1700 mA-30-27dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G27L-200PB
CDFM8
(SOT1110A)
sot1110a_poReel 13" Q1/T1量产Standard MarkingBLF7G27L-200PB,118( 9340 653 17118 )
Bulk Pack量产Standard MarkingBLF7G27L-200PB,112( 9340 653 17112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1DRAIN1drain 1
2DRAIN2drain 2
3GATE1gate 1
4GATE2gate 2
5SOURCEsource
6SENSE DRAINsense drain
7SENSE DRAINsense drain
8SENSE GATEsense gate
9SENSE GATEsense gate
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G27L-200PBBLF7G27L-200PB,118Always Pb-freeNANA
BLF7G27L-200PBBLF7G27L-200PB,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G27L-200PB (中文)Power LDMOS transistorData sheetpdf2012-02-20
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF7G27L-200PB_Data-sheetPCB Design BLF7G27L-200PB (Data sheet)Design supportzip2012-02-27
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF7G27L-200PB_ADS-2009_ModelBLF7G27L-200PB ADS-2009 ModelSimulation modelzip2013-06-25
BLF7G27L-200PB_ADS-2011_ModelBLF7G27L-200PB ADS-2011 ModelSimulation modelzip2014-04-24
sot1110a_poflanged LDMOST ceramic package; 2 mounting holes; 8 leadsOutline drawingpdf2010-04-02
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G27L-200PB9340 653 17118BLF7G27L-200PB,118
BLF7G27L-200PB9340 653 17112BLF7G27L-200PB,112
模型
标题类型日期
BLF7G27L-200PB ADS-2009 ModelSimulation model2013-06-25
BLF7G27L-200PB ADS-2011 ModelSimulation model2014-04-24
其它
标题类型日期
PCB Design BLF7G27L-200PB (Data sheet)Design support2012-02-27
Power LDMOS transistor BLF7G27L-200PB
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged LDMOST ceramic package; 2 mounting holes; 8 leads BLF7G27L-200PB
BLF7G27L-200PB ADS-2009 Model BLF7G27L-200PB
BLF7G27L-200PB ADS-2011 Model BLF7G27L-200PB
PCB Design BLF7G27L-200PB (Data sheet) BLF7G27L-200PB