BLP8G10S-45P(G)：功率LDMOS晶体管
BLP8G10S-45P和BLP8G10S-45PG是双路径45 W LDMOS功率晶体管，适合700 MHz 至1000 MHz频率的基站应用。
特性和优势
应用
| 产品图片  |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| BLP8G10S-45P | SOT1223-1 | 700 | 1000 | 45 | 28 | 19.8 | 20.8 | 2-c WCDMA; 2-c WCDMA | Production |
| BLP8G10S-45PG | SOT1224-1 | 700 | 1000 | 45 | 28 | 19.8 | 20.8 | 2-c WCDMA; 2-c WCDMA | Production |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP8G10S-45P |  HSOP4F (SOT1223-1) | sot1223-1_po | Reel 13" Q1/T1 in Drypack | 量产 | Standard Marking | BLP8G10S-45PY( 9340 673 71518 ) | |
| BLP8G10S-45PG |  HSOP4 (SOT1224-1) | sot1224-1_po | Reel 13" Q1/T1 in Drypack | 量产 | Standard Marking | BLP8G10S-45PGY( 9340 673 72518 ) |
停产信息
| 型号 | 订购码 (12NC) | 最后一次购买日期 | 最后一次交货日期 | 替代产品 |
|---|---|---|---|---|
| BLP8G10S-45P | 934067371118 | |||
| BLP8G10S-45PG | 934067372118 |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLP8G10S-45P | BLP8G10S-45PY |   | 3 | 3 | |
| BLP8G10S-45PG | BLP8G10S-45PGY | | 3 | 3 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLP8G10S-45P_8G10S-45PG (中文) | power LDMOS transistor | Data sheet | 2013-07-25 | |
| AN11183 | Mounting and soldering of RF transistors in over-molded plastic packages | Application note | 2012-11-06 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLP8G10S-45P_8G10S-45PG_Data-sheet | PCB Design BLP8G10S-45P(G) (Data sheet) | Design support | zip | 2013-07-30 |
| 75017604 | Gen8: the latest LDMOS RF power portfolio for wireless infrastructures | Leaflet | 2014-09-04 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLP8G10S-45PG_ADS-2009_Model | BLP8G10S-45PG ADS-2009 Model | Simulation model | zip | 2013-08-06 |
| BLP8G10S-45PG_ADS-2012_Model | BLP8G10S-45PG ADS-2012 Model | Simulation model | zip | 2014-05-02 |
| sot1223-1_po | plastic, heatsink small outline package; 4 leads(flat) | Outline drawing | 2012-05-03 | |
| sot1224-1_po | plastic, heatsink small outline package; 4 leads | Outline drawing | 2012-04-17 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLP8G10S-45P | 9340 673 71518 | BLP8G10S-45PY |
| BLP8G10S-45PG | 9340 673 72518 | BLP8G10S-45PGY |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLP8G10S-45PG ADS-2009 Model | Simulation model | 2013-08-06 |
| BLP8G10S-45PG ADS-2012 Model | Simulation model | 2014-05-02 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLP8G10S-45P(G) (Data sheet) | Design support | 2013-07-30 |
- power LDMOS transistor BLP8G10S_45P_G
- power LDMOS transistor BLP8G10S_45P_G
- power LDMOS transistor BLP8G10S_45P_G
- Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
- Enabling the Mobile Experience rf
- Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- plastic, heatsink small outline package; 4 leads(flat) BLP8G20S-80P
- plastic, heatsink small outline package; 4 leads BLP8G10S_45P_G
- BLP8G10S-45PG ADS-2009 Model BLP8G10S_45P_G
- BLP8G10S-45PG ADS-2012 Model BLP8G10S_45P_G
- PCB Design BLP8G10S-45P(G) (Data sheet) BLP8G10S_45P_G
