BSR57: N-channel FETs
Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a
plastic microminiature envelope designed for application in thick and thin-film circuits. The
transistors are intended for low-power, chopper or switching applications in industrial
service.
SOT023
Data Sheets (1)
Name/Description | Modified Date |
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N-channel FETs (REV 3.0) PDF (430.0 kB) BSR56_57_58 [English] | 30 Jun 2014 |
Package Information (1)
Packing (1)
Supporting Information (2)
Ordering Information
Product | Status | Package version | Package name | VDS [max] (V) | IGF [max] (mA) | Channel type | Number of transistors | VGSoff [min] (V) | RDSon [max] @ VGS = 10 V (mΩ) | VGSoff [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] (Ohm) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | toff [max] (ns) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
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BSR57 | Active | SOT23 | TO-236AB | 40 | | | | | | | | | | | | | | | | | | | | | | | | 2011-01-24 |
BSR57/C | No Longer Manufactured | | TO-236AB | 40 | | | | | | | | | | | | | | | | | | | | | | | | 2011-01-24 |
Package Information