MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

NI-780-4, NI-780S-4 Package Image
特性
  • Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.
  • Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8P20165WHR3, MRF8P20165WHSR3 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 0) PDF (756.7 kB) MRF8P20165WH29 Apr 2011
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D21 Mar 2016
Supporting Information (1)
Name/DescriptionModified Date
MRF8P20165WH and MRF8P20165WH/HS: LDMOS Transistors Cover Full Wireless Bands (REV 1) PDF (587.7 kB) MRF8P20140WH_20165WH_TRN_SI29 Apr 2011
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8P20165WHR3Active193019952850.210437 @ AVGW-CDMA16.3 @ 196047.70.79I/OAB, CLDMOS
MRF8P20165WHSR3Active193019952850.210437 @ AVGW-CDMA16.3 @ 196047.70.79I/OAB, CLDMOS
MRF8P20165WHSR5No Longer Manufactured193019952850.210437 @ AVGW-CDMA16.3 @ 196047.70.79I/OAB, CLDMOS
MRF8P20165WHR5No Longer Manufactured193019952850.210437 @ AVGW-CDMA16.3 @ 196047.70.79I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI 780H-498ASA10793DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20165WHR3MRF8P20165WHR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P20165WHR5MRF8P20165WHR5.pdf260
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20165WHSR3MRF8P20165WHSR3.pdf260
MPQ - 50 REELPOQ - 50 REELMigration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P20165WHSR5MRF8P20165WHSR5.pdf260
MRF8P20165WHR3, MRF8P20165WHSR3 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs MRF8P20165WH
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MRF8P20165WH and MRF8P20165WH/HS: LDMOS Transistors Cover Full Wireless Bands MRF8P20165WH
98ASA10793D MMRF1310H
MRF8P20165WHR3.pdf MRF8P20165WH
MRF8P20165WHR5.pdf MRF8P20165WH
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MRF8P20165WHSR3.pdf MRF8P20165WH
MRF8P20165WHSR5.pdf MRF8P20165WH