MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor

OM-780-4 Package Image
特性
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8P9210NR3 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor (REV 0) PDF (705.1 kB) MRF8P9210N14 Dec 2011
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D22 Mar 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8P9210NR3Active9209602852.919363 @ AVGW-CDMA16.7 @ 96047.40.53I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-4 straight Cu98ASA10833DMPQ - 250 REELPOQ - 250 REELActiveMRF8P9210NR3MRF8P9210NR3.pdf3260
MRF8P9210NR3 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor MRF8P9210N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MRF8P9210N CAD DXF File MRF8P9210N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MRF8P9210NR3.pdf MRF8P9210N