MRF8P9300H: 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

NI-1230H-4S, NI-1230S-4S Product Images
特性
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1.1) PDF (857.5 kB) MRF8P9300H27 Jul 2010
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C23 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8P9300HSR6Active9209602855.1326100 @ AVGW-CDMA19.4 @ 96035.80.22I/OABLDMOS
MRF8P9300HR6No Longer Manufactured9209602855.1326100 @ AVGW-CDMA19.4 @ 96035.80.22I/OABLDMOS
MRF8P9300HSR5No Longer Manufactured9209602855.1326100 @ AVGW-CDMA19.4 @ 96035.80.22I/OABLDMOS
MRF8P9300HR5No Longer Manufactured9209602855.1326100 @ AVGW-CDMA19.4 @ 96035.80.22I/OLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230S98ARB18247CMPQ - 150 REELPOQ - 150 REELActiveMRF8P9300HSR6MRF8P9300HSR6.pdf260
MPQ - 50 REELPOQ - 50 REELMigration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P9300HSR5MRF8P9300HSR5.pdf260
NI-123098ASB16977CMPQ - 150 REELPOQ - 150 REELNo Longer ManufacturedMRF8P9300HR6MRF8P9300HR6.pdf260
No Longer ManufacturedMRF8P9300HR5MRF8P9300HR5.pdf260
MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs MRF8P9300H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF8P9300HSR6.pdf MRF8P9300H
MRF8P9300HSR5.pdf MRF8P9300H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF8P9300HR6.pdf MRF8P9300H
MRF8P9300HR5.pdf MRF8P9300H