MWE6IC9100N: 865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers

The MWE6IC9100NR1 and MWE6IC9100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. These multi-stage structures are rated for 26 to 32 Volt operation and cover all typical cellular base station modulation formats.

TO-272 WB-14, TO-270 WB-14 Package Image
特性
  • Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain: 33.5 dB Power Added Efficiency: 54%
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869–960 MHz) Power Gain: 35.5 dB Power Added Efficiency: 39% Spectral Regrowth @ 400 kHz Offset = –63 dBc Spectral Regrowth @ 600 kHz Offset = –81 dBc EVM: 2% rms
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
  • Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (2)
Name/DescriptionModified Date
MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier (REV 4.1) PDF (1.1 MB) MWE6IC9100N-131 Oct 2011
MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier (REV 6) PDF (1.1 MB) MWE6IC9100N-231 Oct 2011
Application Notes (6)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN326307 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP15 May 2015
Package Information (2)
Name/DescriptionModified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D18 Mar 2016
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins (REV B) PDF (71.4 kB) 98ASA10649D26 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MWE6IC9100NBR1Not Recommended for New Design8659602650.5112100 @ CWCW33.5 @ 960540.38InputABLDMOS
MWE6IC9100NR1No Longer Manufactured8659602650.5112100 @ CWCW33.5 @ 960540.38InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-272 WB-14 LEAD98ASA10649DMPQ - 500 REELPOQ - 500 BOXNot Recommended for New DesignMWE6IC9100NBR1MWE6IC9100NBR1.pdf3260
TO-270 WB-14 LEAD98ASA10650DMPQ - 500 REELPOQ - 500 BOXNo Longer ManufacturedMWE6IC9100NR1MWE6IC9100NR1.pdf3260
MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier mwe6ic9100n
MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier mwe6ic9100n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins MD7IC2250N
MWE6IC9100NBR1.pdf MWE6IC9100N
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N
MWE6IC9100NR1.pdf MWE6IC9100N