PBSS8510PA: 100 V, 5.2 A NPN low V_CEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS9410PA.

Outline 3d SOT1061
Data Sheets (1)
Name/DescriptionModified Date
100 V, 5.2 A NPN low V_CEsat (BISS) transistor (REV 1.0) PDF (168.0 kB) PBSS8510PA [English]02 Jun 2010
Application Notes (3)
Name/DescriptionModified Date
Low VCEsat transistors in medium power loadswitch applications (REV 2.0) PDF (252.0 kB) AN10909 [English]14 Mar 2013
Next generation of NXP® low VCEsat transistors: improved technology for discrete semiconductors (REV 3.0) PDF (1.3 MB) AN11045 [English]04 Mar 2013
Thermal behavior of small-signal discretes on multilayer PCBs (REV 1.0) PDF (211.0 kB) AN11076 [English]12 Jul 2011
Package Information (1)
Name/DescriptionModified Date
DFN2020-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (185.0 kB) SOT1061 [English]08 Feb 2016
Packing (1)
Name/DescriptionModified Date
DFN2020-3; reel pack; standard product orientation; 12NC ending 115 (REV 1.0) PDF (261.0 kB) SOT1061_115 [English]07 Nov 2012
Reliability and Quality Information (1)
Name/DescriptionModified Date
PBSS8510PA NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS8510PA_NXP_PRODUCT_QUALITY [English]31 Jan 2015
Supporting Information (1)
Name/DescriptionModified Date
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]30 Sep 2013
SPICE model
Ordering Information
ProductStatusPackage versionPackage nameSize (mm)transistor polarityTransistor polaritynumber of transistorsPtot [max] (mW)VCEO [max] (V)IC [max] (A)ICM [max] (A)hFE [min]hFE [typ]fT [min] (MHz)fT [typ] (MHz)RCEsat [typ] (mΩ)RCEsat [max] (mΩ)VCEsat [max] (mV)
PBSS8510PAActiveSOT1061DFN2020-32 x 2 x 0.65NPN121001005.26180285951504865340
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFLeadFree Conversion DateEFRIFR(FIT)MTBF(hour)MSLMSL LF
PBSS8510PASOT1061Reflow_Soldering_ProfileReel 7" Q1/T1ActivePBSS8510PA,115 (9340 639 24115)AEPBSS8510PAAlways Pb-free153.00.711.41E911
100 V, 5.2 A NPN low V_CEsat (BISS) transistor PBSS8510PA
Low VCEsat transistors in medium power loadswitch applications PBSS4041SPN
Next generation of NXP® low VCEsat transistors: improved technology for discrete semiconductors PBSS4041SPN
Thermal behavior of small-signal discretes on multilayer PCBs PBSS9110Z
PBSS8510PA NXP Product Quality PBSS8510PA
PBSS8510PA SPICE model PBSS8510PA
DFN2020-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm PMEG6020EPA
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
DFN2020-3; reel pack; standard product orientation; 12NC ending 115 PMEG6020EPA
PTVSXU1UPA_SERIES