Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS® technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Name/Description | Modified Date |
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N-channel TrenchMOS® standard level FET (REV 2.0) PDF (357.0 kB) PHB20N06T [English] | 25 Nov 2009 |
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Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 [English] | 10 Oct 2012 |
Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English] | 01 Oct 2012 |
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
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Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
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plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) (REV 1.2) PDF (237.0 kB) SOT404 [English] | 06 Sep 2016 |
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D2PAK; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or... (REV 2.0) PDF (90.0 kB) SOT404_118 [English] | 04 Aug 2016 |
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Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English] | 31 Oct 2016 |
Product | Status | Package name | Package version | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
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PHB20N06T | Active | D2PAK | SOT404 | N | 1 | 55 | 75 | 175 | 20.3 | 6 | 11 | 11 | 62 | 120 | 3 | N | 320 | 92 | 2010-11-13 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | MSL | MSL LF |
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PHB20N06T | SOT404 | Reel 13" Q1/T1 | Active | PHB20N06T,118 (9340 566 15118) | PHB20N06T | PHB20N06T | 1 | 1 |