Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS® technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Name/Description | Modified Date |
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N-channel TrenchMOS® standard level FET (REV 3.0) PDF (166.0 kB) PHD9NQ20T [English] | 16 Dec 2010 |
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Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 [English] | 10 Oct 2012 |
Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English] | 01 Oct 2012 |
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
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Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
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plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) (REV 1.0) PDF (221.0 kB) SOT428 [English] | 08 Feb 2016 |
Name/Description | Modified Date |
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Tape reel SMD; standard product orientation; 12NC ending 118 (REV 1.0) PDF (184.0 kB) SOT428_118 [English] | 23 Nov 2012 |
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Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English] | 31 Oct 2016 |
Product | Status | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
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PHD9NQ20T | Active | SOT428 | DPAK | N | 1 | 200 | 400 | 175 | 8.7 | 12 | 24 | 88 | 24 | 500 | 3 | N | 959 | 93 | 2010-12-16 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | MSL | MSL LF |
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PHD9NQ20T | SOT428 | Reel 13" Q1/T1 | Active | PHD9NQ20T,118 (9340 557 66118) | PHD9NQ20T | PHD9NQ20T | 1 | 1 |