PHN210T: Dual N-channel TrenchMOS® intermediate level FET
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS® technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
sot096-1_3d
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| Dual N-channel TrenchMOS® intermediate level FET (REV 2.0) PDF (314.0 kB) PHN210T [English] | 16 Dec 2010 |
Application Notes (11)
| Name/Description | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
| Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
| Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
| Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English] | 01 Oct 2012 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
Selector Guides (2)
| Name/Description | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| plastic small outline package; 8 leads; body width 3.9 mm (REV 1.0) PDF (244.0 kB) SOT96-1 [English] | 08 Feb 2016 |
Packing (1)
| Name/Description | Modified Date |
|---|---|
| SO8; Reel pack; SMD, 13" Q1/T1 Standard product orientation Orderable part number ending ,118 or J Ordering... (REV 2.0) PDF (232.0 kB) SOT96-1_118 [English] | 19 Apr 2013 |
Supporting Information (4)
| Name/Description | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English] | 31 Oct 2016 |
| Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE [English] | 30 Sep 2013 |
| Footprint for reflow soldering (REV 1.0) PDF (9.0 kB) SO-SOJ-REFLOW [English] | 08 Oct 2009 |
| Footprint for wave soldering (REV 1.0) PDF (8.0 kB) SO-SOJ-WAVE [English] | 08 Oct 2009 |
SPICE model
- PHN210T SPICE model (REV 1.3) prm PHN210T_1 6/8/2012
Ordering Information
| Product | Status | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHN210T | Active | SOT96-1 | SO8 | N | 2 | 30 | 100 | 200 | 150 | 3.4 | 0.7 | 6 | 6 | 2 | 55 | 2 | N | 250 | 88 | 2011-01-05 |
Package Information
| Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHN210T | | SOT96-1 | SO-SOJ-REFLOW
SO-SOJ-WAVE SO-SOJ-REFLOW SO-SOJ-WAVE | Reel 13" Q1/T1 | Active | PHN210T,118 (9340 554 51118) | PHN210T | PHN210T |    | week 9, 2005 | 1 | 1 |
- Using power MOSFETs in parallel BUK7M12-60E
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- Designing RC Snubbers BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- PHN210T SPICE model PHN210T
- plastic small outline package; 8 leads; body width 3.9 mm CBT3306_Q100
- Footprint for reflow soldering NPIC6C596A_Q100
- Footprint for wave soldering NPIC6C596A_Q100
- SO8; Reel pack; SMD, 13" Q1/T1 Standard product orientation Orderable part number ending ,118 or J Ordering... CBT3306_Q100
- SA612A
