PHT6NQ10T: N-channel TrenchMOS® standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS® technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
SOT223
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| N-channel TrenchMOS® (tm) transistor (REV 1.0) PDF (79.0 kB) PHT6NQ10T [English] | 01 Aug 1999 |
Application Notes (11)
| Name/Description | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
| Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
| Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
| Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English] | 01 Oct 2012 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
Selector Guides (3)
| Name/Description | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
| Broad small-signal MOSFET portfolio to suit a wide range of applications (REV 1.0) PDF (3.3 MB) 75017288 [English] | 23 Aug 2012 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| plastic surface-mounted package with increased heatsink; 4 leads (REV 1.0) PDF (198.0 kB) SOT223 [English] | 08 Feb 2016 |
Packing (1)
| Name/Description | Modified Date |
|---|---|
| Tape reel SMD; standard product orientation 12NC ending 135 (REV 1.0) PDF (189.0 kB) SOT223_135 [English] | 07 Nov 2012 |
Reliability and Quality Information (2)
| Name/Description | Modified Date |
|---|---|
| PHT6NQ10T NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PHT6NQ10T_1 [English] | 31 Jan 2015 |
| PHT6NQ10T NXP® Product Quality (REV 1.1) PDF (74.0 kB) PHT6NQ10T_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
Supporting Information (3)
| Name/Description | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English] | 31 Oct 2016 |
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
| Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE [English] | 30 Sep 2013 |
SPICE model
- PHT6NQ10T SPICE model (REV 1.3) prm PHT6NQ10T_1_2 6/8/2012
S-Parameters
- PHT6NQ10T.16_03_2012 Spice parameter (REV 1.0) lib PHT6NQ10T_16_03_2012 4/16/2012
Ordering Information
| Product | Status | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHT6NQ10T | Not Recommended for New Design | SC-73 | N | 1 | 100 | 90 | 150 | 3 | 8.2 | 21 | 8.3 | 21 | 3 | N | 633 | 103 | 2011-01-24 |
Package Information
| Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHT6NQ10T | | SOT223 | Reflow_Soldering_Profile
Wave_Soldering_Profile Reflow_Soldering_Profile Wave_Soldering_Profile | Reel 11¼" Q1/T1 in LargePack | Active | PHT6NQ10T,135 (9340 558 76135) | 6NQ10T | PHT6NQ10T |    | week 35, 2003 | 1 | 1 |
- N-channel TrenchMOS (tm) transistor PHT6NQ10T
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Designing RC Snubbers BUK7M12-60E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Broad small-signal MOSFET portfolio to suit a wide range of applications BSS84AKW
- PHT6NQ10T NXP Product Quality PHT6NQ10T
- PHT6NQ10T.16_03_2012 Spice parameter PHT6NQ10T
- PHT6NQ10T SPICE model PHT6NQ10T
- Tape reel SMD; standard product orientation 12NC ending 115 BUK7880-55A
- Tape reel SMD; standard product orientation 12NC ending 135 BUK7880-55
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- Footprint for wave soldering SOT223 BLT81
- plastic surface-mounted package with increased heatsink; 4 leads BLT81
- Footprint for reflow soldering SOT223 BLT81
