PMV65ENEA: 40 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SOT023
Data Sheets (1)
Package Information (1)
Packing (1)
Supporting Information (2)
SPICE model
Ordering Information
Product | Status | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | RDSon [typ] @ VGS = 10 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | RDSon [typ] @ VGS = 4.5 V (mΩ) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | ID [max] @ T = 100 °C (A) | Ciss [typ] (pF) | IDM [max] (A) | Coss [typ] (pF) | Date | Rth(j-mb) [max] (K/W) |
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PMV65ENEA | Active | SOT23 | TO-236AB | N | 1 | 40 | 75 | | 99 | | 64 | 2.7 | 0.8 | | 79 | 4.1 | 4.1 | 0.49 | 4.1 | 1.6 | Y | 1.7 | 160 | 11 | 25 | 2016-04-28 | 160 |
Package Information