PMZB1200UPE: 30 V, P-channel Trench MOSFET _ BDTIC a Leading Distributor in China

PMZB1200UPE: 30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Data Sheets (1)

Name/Description	Modified Date
30 V, P-channel Trench MOSFET (REV 1.0) PDF (214.0 kB) PMZB1200UPE [English]	25 Mar 2015

Application Notes (6)

Name/Description	Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]	13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]	22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]	19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]	14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]	16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]	27 Jan 2011

Selector Guides (1)

Name/Description	Modified Date
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]	11 Sep 2014

Package Information (1)

Name/Description	Modified Date
DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm (REV 1.0) PDF (181.0 kB) SOT883B [English]	08 Feb 2016

Packing (1)

Name/Description	Modified Date
Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... (REV 1.0) PDF (206.0 kB) SOT883B_315 [English]	22 Jul 2016

Supporting Information (2)

Name/Description	Modified Date
Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English]	31 Oct 2016
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]	30 Sep 2013

SPICE model

PMZB1200UPE Spice model (REV 1.0) lib PMZB1200UPE_1 5/21/2015

Ordering Information

Product	Status	Package version	Package name	Channel type	Number of transistors	R_DSon [max] @ V_GS = 10 V (mΩ)	V_DS [max] (V)	R_DSon [max] @ V_GS = 5 V (mΩ)	R_DSon [max] @ V_GS = 4.5 V (mΩ)	T_j [max] (°C)	R_DSon [max] @ V_GS = 2.5 V (mΩ)	I_D [max] (A)	Q_GD [typ] (nC)	QG(tot) [typ] @ VGS = 4.5 V (nC)	Q_G(tot) [typ] (nC)	QG(tot) [typ] @ VGS = 10 V (nC)	P_tot [max] (W)	Q_r [typ] (nC)	V_GSth [typ] (V)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	Date
PMZB1200UPE	Active	SOT883B	DFN1006B-3	P	1		-30		1400	150	2300	-0.41	0.2	0.7	0.7		0.31		-0.7	N	43.2	5.9	2015-03-25

Package Information

Product ID	Package Description	Outline Version	Reflow/Wave Soldering	Packing	Product Status	Part NumberOrdering code(12NC)	Marking	Chemical Content	RoHS / Pb Free / RHF	LeadFree Conversion Date	EFR	IFR(FIT)	MTBF(hour)	MSL	MSL LF
PMZB1200UPE		SOT883B	Reflow_Soldering_Profile	Reel 7" Q1/T1 Pitch 2mm	Active	PMZB1200UPEYL (9340 693 32315)	0101 0110	PMZB1200UPE		Always Pb-free	234.0	1.08	9.26E8	1	1

30 V, P-channel Trench MOSFET PMZB1200UPE

Using power MOSFETs in parallel BUK7M12-60E

LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E

Using RC Thermal Models BUK7M12-60E

LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E

LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E

LFPAK MOSFET thermal design guide BUK7M12-60E

NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW

Power MOSFET frequently asked questions and answers BUK7M12-60E

PMZB1200UPE Spice model PMZB1200UPE

DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm BC857BMB

Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20

Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... BC857BMB

PMZB950UPE

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