PMZB290UN: 20 V, single N-channel Trench MOSFET _ BDTIC a Leading Distributor in China

PMZB290UN: 20 V, single N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Data Sheets (1)

Name/Description	Modified Date
20 V, single N-channel Trench MOSFET (REV 2.0) PDF (211.0 kB) PMZB290UN [English]	20 Jan 2016

Application Notes (10)

Name/Description	Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]	13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]	10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]	22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]	19 May 2014
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English]	04 Feb 2014
Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English]	08 Nov 2013
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]	29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]	14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]	16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]	27 Jan 2011

Brochures (2)

Name/Description	Modified Date
适用于便携设备和移动电话... (REV 1.0) PDF (4.9 MB) 939775017444_ZH [English]	28 Oct 2013
Discretes for portable devices and mobile handsets (REV 1.1) PDF (3.9 MB) 939775017444 [English]	04 Sep 2013

Selector Guides (3)

Name/Description	Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]	17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]	11 Sep 2014
Broad small-signal MOSFET portfolio to suit a wide range of applications (REV 1.0) PDF (3.3 MB) 75017288 [English]	23 Aug 2012

Package Information (1)

Name/Description	Modified Date
DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm (REV 1.0) PDF (181.0 kB) SOT883B [English]	08 Feb 2016

Packing (1)

Name/Description	Modified Date
Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... (REV 1.0) PDF (206.0 kB) SOT883B_315 [English]	22 Jul 2016

Reliability and Quality Information (2)

Name/Description	Modified Date
PMZB290UN NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMZB290UN_NXP_PRODUCT_QUALITY [English]	31 Jan 2015
PMZB290UN NXP® Product Reliability (REV 1.0) PDF (88.0 kB) PMZB290UN_1 [English]	16 Jul 2014

Supporting Information (2)

Name/Description	Modified Date
Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English]	31 Oct 2016
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]	30 Sep 2013

S-Parameters

PMZB290UN.23_02_2012 Spice parameter (REV 1.0) lib PMZB290UN_23_02_2012 4/16/2012

Ordering Information

Product	Status	Package version	Package name	Channel type	Number of transistors	R_DSon [max] @ V_GS = 10 V (mΩ)	V_DS [max] (V)	R_DSon [max] @ V_GS = 5 V (mΩ)	R_DSon [max] @ V_GS = 4.5 V (mΩ)	T_j [max] (°C)	R_DSon [max] @ V_GS = 2.5 V (mΩ)	I_D [max] (A)	Q_GD [typ] (nC)	QG(tot) [typ] @ VGS = 4.5 V (nC)	Q_G(tot) [typ] (nC)	QG(tot) [typ] @ VGS = 10 V (nC)	P_tot [max] (W)	V_GSth [typ] (V)	Q_r [typ] (nC)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	Date
PMZB290UN	Active	SOT883B	DFN1006B-3	N	1		20		350	150	450	1	0.18	0.89	0.89		0.36	0.7		N	45	11	2012-05-11

Package Information

Product ID	Package Description	Outline Version	Reflow/Wave Soldering	Packing	Product Status	Part NumberOrdering code(12NC)	Marking	Chemical Content	RoHS / Pb Free / RHF	LeadFree Conversion Date	EFR	IFR(FIT)	MTBF(hour)	MSL	MSL LF
PMZB290UN		SOT883B	Reflow_Soldering_Profile	Reel 7" Q1/T1 Pitch 2mm	Active	PMZB290UN,315 (9340 658 66315)	0000 0101	PMZB290UN		Always Pb-free	301.0	1.4	7.14E8	1	1

20 V, single N-channel Trench MOSFET PMZB290UN

Using power MOSFETs in parallel BUK7M12-60E

Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E

LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E

Using RC Thermal Models BUK7M12-60E

Understanding power MOSFET data sheet parameters BUK7M12-60E

Understanding power MOSFET data sheet parameters BUK7K6R8-40E

Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E

LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E

LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E

LFPAK MOSFET thermal design guide BUK7M12-60E

适用于便携设备和移动电话... ptvsxs1ur_automotive

Discretes for portable devices and mobile handsets ptvsxs1ur_automotive

Discretes Semiconductors Selection Guide 2016 BUK7M12-60E

NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW

Broad small-signal MOSFET portfolio to suit a wide range of applications BSS84AKW

PMZB290UN NXP® Product Quality PMZB290UN

PMZB290UN NXP® Product Reliability PMZB290UN

Power MOSFET frequently asked questions and answers BUK7M12-60E

PMZB290UN.23_02_2012 Spice parameter PMZB290UN

DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm BC857BMB

Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20

Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... BC857BMB

PMZB950UPE

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