A2G35S200-01S: 3400-3600 MHz, 40 W Avg., 48 V Airfast® RF Power GaN Transistor
The A2G35S200-01SR3 40 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.
NI-400S-2S Package Image
特性
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet (REV 0) PDF (347.3 kB) A2G35S200-01S | 16 May 2016 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10732D, NI-C, 10.0x10.0x3.66, Pitch 7.8, 3 Pins (REV C) PDF (45.6 kB) 98ASA10732D | 19 Jan 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2G35S200-01SR3 | Active | 3400 | 3600 | 48 | 52.6 | 180 | 40 @ AVG | W-CDMA | 16.1 @ 3500 | 35.3 | 1.3 | Input | AB | GaN |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-400S-240 | 98ASA10732D | MPQ - 250 REELPOQ - 250 BOX | Active | A2G35S200-01SR3 | A2G35S200-01SR3.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA10732D, NI-C, 10.0x10.0x3.66, Pitch 7.8, 3 Pins A2G35S200-01S
- A2G35S200-01SR3.pdf A2G35S200-01S
