A2I25D025N: 100-3600 MHz, 3.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Amplifiers

TO-270WB-17 and TO-270WBG-17 Package Image
特性
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
A2I25D025N 2100-2900 MHz, 3.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Power Amplifier Data... (REV 0) PDF (745.5 kB) A2I25D025N20 Mar 2015
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP15 May 2015
Package Information (2)
Name/DescriptionModified Date
98ASA00583D, TO-WB, 17.53x9.02x2.59, Pitch 9.02, 18 Pins (REV B) PDF (86.9 kB) 98ASA00583D22 Jan 2016
98ASA00729D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 18 Pins (REV B) PDF (88.0 kB) 98ASA00729D18 Jan 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2I25D025GNR1Active210029002843.8243.2 @ AVGW-CDMA32.5 @ 2690201.8I/OABLDMOS
A2I25D025NR1Active210029002843.8243.2 @ AVGW-CDMA32.5 @ 2690201.8I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WBG-1798ASA00729DMPQ - 500 REELPOQ - 500 BOXActiveA2I25D025GNR1A2I25D025GNR1.pdf3260
TO-270 WB-1798ASA00583DMPQ - 500 REELPOQ - 500 REELActiveA2I25D025NR1A2I25D025NR1.pdf3260
A2I25D025N 2100-2900 MHz, 3.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Power Amplifier Data... A2I25D025N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
A2I25D025N PCB DXF file A2I25D025N
98ASA00729D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 18 Pins A2I35H060N
A2I25D025GNR1.pdf A2I25D025N
98ASA00583D, TO-WB, 17.53x9.02x2.59, Pitch 9.02, 18 Pins A2I35H060N
A2I25D025NR1.pdf A2I25D025N