A2I25H060N: 2300-2690 MHz, 10.5 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier
TO-270WB-17 and TO-270WBG-17 Package Image
特性
- Advanced High Performance In-Package Doherty
- On-Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2I25H060N 2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet (REV 0) PDF (1.1 MB) A2I25H060N | 08 Jan 2016 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 | 12 May 2004 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 | 09 Oct 2003 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA00583D, TO-WB, 17.53x9.02x2.59, Pitch 9.02, 18 Pins (REV B) PDF (86.9 kB) 98ASA00583D | 22 Jan 2016 |
| 98ASA00729D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 18 Pins (REV B) PDF (88.0 kB) 98ASA00729D | 18 Jan 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2I25H060NR1 | Active | 2300 | 2690 | 28 | 47.2 | 52 | 10.5 @ AVG | W-CDMA | 27.5 @ 2590 | 40.9 | 2.2 | I/O | AB, C | LDMOS |
| A2I25H060GNR1 | Active | 2300 | 2690 | 28 | 47.2 | 52 | 10.5 @ AVG | W-CDMA | 27.5 @ 2590 | 40.9 | 2.2 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270 WBG-17 | 98ASA00729D | MPQ - 500 REELPOQ - 500 REEL | Active | A2I25H060GNR1 | A2I25H060GNR1.pdf |  | 3 | 260 |
| TO-270 WB-17 | 98ASA00583D | MPQ - 500 REELPOQ - 500 REEL | Active | A2I25H060NR1 | A2I25H060NR1.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA00729D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 18 Pins A2I35H060N
- A2I25H060GNR1.pdf A2I25H060N
- 98ASA00583D, TO-WB, 17.53x9.02x2.59, Pitch 9.02, 18 Pins A2I35H060N
- A2I25H060NR1.pdf A2I25H060N
