A2T20H160W04N: 1880-2025 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor
OM-780-4L Package Image
特性
- Advanced high performance in-package Doherty
- Designed for wide instantaneous bandwidth applications
- Greater negative gate-source voltage range for improved Class C operation
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for digital predistortion error correction systems
- RoHS compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T20H160W04N 1880-2025 MHz, 28 W Avg, 28 V Data Sheet (REV 0) PDF (579.6 kB) A2T20H160W04N | 31 Aug 2016 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Printed Circuit Boards
- A2T20H160W04N 180-2025 MHz PCB DXF file (REV 2) ZIP A2T20H160W04N_180-2025_PCB 8/31/2016
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T20H160W04NR3 | Active | 1880 | 2025 | 28 | 49.5 | 90 | 28 @ AVG | W-CDMA | 17 @ 1960 | 47.7 | 0.45 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-4 straight Cu | 98ASA10833D | MPQ - 250 REELPOQ - 250 BOX | Active | A2T20H160W04NR3 | A2T20H160W04NR3.pdf |   | 3 | 260 |
- A2T20H160W04N 1880-2025 MHz, 28 W Avg, 28 V Data Sheet A2T20H160W04N
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- A2T20H160W04N 180-2025 MHz PCB DXF file A2T20H160W04N
- 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
- A2T20H160W04NR3.pdf A2T20H160W04N
