A2T21H100-25S: 2110-2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor
NI-780S-4L4S Package Image
特性
- Advanced High Performance In-Package Doherty
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (491.3 kB) A2T21H100-25S | 01 Jun 2015 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins (REV A) PDF (56.1 kB) 98ASA00406D | 15 Feb 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T21H100-25SR3 | Active | 2110 | 2170 | 28 | 48.8 | 75 | 18 @ AVG | W-CDMA | 17.4 @ 2170 | 50.5 | 0.76 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S-8 | 98ASA00406D | MPQ - 250 REELPOQ - 250 BOX | Active | A2T21H100-25SR3 | A2T21H100-25SR3.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins AFT26HW050S
- A2T21H100-25SR3.pdf A2T21H100-25S
