A3T26H200W24S: 2496-2690 MHz, 37 W Avg., 28 V Airfast® RF Power LDMOS Transistor

For additional information and sample availability contact your local NXP Sales Office or NXP Authorized Distributor.

NI-880XS-4L2L Package Image
特性
  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Supporting Information (1)
Name/DescriptionModified Date
RF Airfast Third-Generation Products and Solutions (REV 0) PDF (829.9 kB) AIRFAST_THIRD_GENERATION_TRN_SI30 Sep 2016