AFT18H357-24N: 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor

OM-1230-4L2L Package Image
特性
  • Advanced high performance in-package Doherty
  • High thermal conductivity packaging technology for reduced thermal resistance
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant
Data Sheets (1)
Name/DescriptionModified Date
AFT18H357-24N 1805–1880 MHz, 63 W AVG., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (533.2 kB) AFT18H357-24N12 May 2015
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins (REV O) PDF (91.2 kB) 98ASA00787D05 Dec 2014
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT18H357-24NR6Active18051880285320063 @ AVGW-CDMA17.5 @ 180548.70.23I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM-1230-4L2L98ASA00787DMPQ - 150 REELPOQ - 150 BOXActiveAFT18H357-24NR6AFT18H357-24NR6.pdf3260
AFT18H357-24N 1805–1880 MHz, 63 W AVG., 28 V Airfast® RF Power LDMOS Transistor Data Sheet AFT18H357-24N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT18H357-24N PCB DXF file AFT18H357-24N
98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins AFT18H357-24N
AFT18H357-24NR6.pdf AFT18H357-24N