AFT21S232S: 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor

NI-780S-2 Package Image
特性
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • NI-780S-2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT21S230SR3, AFT21S230-12SR3, AFT21S232SR3 2110-2170 MHz, 50 W AVG., 28 V Airfast® RF Power LDMOS... (REV 3) PDF (550.7 kB) AFT21S230S_232S31 Mar 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT21S232SR3Active211021702852.618250 @ AVGW-CDMA16.7 @ 211030.50.43I/OABLDMOS
AFT21S232SR5Active211021702852.618250 @ AVGW-CDMA16.7 @ 211030.50.43I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 REELActiveAFT21S232SR3AFT21S232SR3.pdf260
MPQ - 50 REELPOQ - 50 REELActiveAFT21S232SR5AFT21S232SR5.pdf260
AFT21S230SR3, AFT21S230-12SR3, AFT21S232SR3 2110-2170 MHz, 50 W AVG., 28 V Airfast® RF Power LDMOS... AFT21S232S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
AFT21S232SR3.pdf AFT21S232S
AFT21S232SR5.pdf AFT21S232S