MRFE6VP100H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

NI-780-4, NI-780S-4 Package Image
特性
  • Wide Operating Frequency Range
  • Extremely Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.
Data Sheets (1)
Name/DescriptionModified Date
MRFE6VP100HR5, MRFE6VP100HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors (REV 0) PDF (1.2 MB) MRFE6VP100H30 May 2012
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Fact Sheets (1)
Name/DescriptionModified Date
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet (REV 0) PDF (337.4 kB) RFWIDEBNDFS18 Jun 2012
Brochures (1)
Name/DescriptionModified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR160804 Sep 2015
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D21 Mar 2016
Supporting Information (1)
Name/DescriptionModified Date
50V Rugged Wideband LDMOS Transistors (REV 0) PDF (778.4 kB) 50VWIDEBAND_TRN_SI15 Jun 2012
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRFE6VP100HSR5Active1.820005050100100 @ CW1-Tone27.2 @ 512700.38UnmatchedABLDMOS
MRFE6VP100HR5Active1.820005050100100 @ CW1-Tone27.2 @ 512700.38UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780-498ASA10793DMPQ - 50 REELPOQ - 50 REELActiveMRFE6VP100HR5MRFE6VP100HR5.pdf260
NI-780S-498ASA10718DMPQ - 50 REELPOQ - 50 REELActiveMRFE6VP100HSR5MRFE6VP100HSR5.pdf260
MRFE6VP100HR5, MRFE6VP100HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors mrfe6vp100h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet mrfe6vs25n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
50V Rugged Wideband LDMOS Transistors mrfe6vs25n
MRFE6VP100H 512 MHz Narrowband PCB DXF file MRFE6VP100H
98ASA10793D MMRF1310H
MRFE6VP100HR5.pdf MRFE6VP100H
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MRFE6VP100HSR5.pdf MRFE6VP100H