2N6039: 4.0 A, 80 V NPN Darlington Bipolar Power Transistor

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Features
  • High DC Current Gain -hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current CapabilityIS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-EmitterResistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost RatioTO-225AA Plastic Package
  • Pb-Free Packages are Available
Packages
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6039.LIB (1.0kB)0
Saber Model2N6039.SIN (1.0kB)0
Spice2 Model2N6039.SP2 (1.0kB)0
Spice3 Model2N6039.SP3 (1.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-22577-09 (32.2kB)AD
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Darlington Complementary Silicon Power Transistors2N6035/D (144kB)15DEC, 2013
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
2N6039GActivePb-free Halide freeTO-225-377-09NABulk Box500$0.3223
2N6039Last ShipmentsTO-225-377-09NABulk Box500
Specifications
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6039GNPN48020.751525
Plastic Darlington Complementary Silicon Power Transistors (144kB) 2N6039
PSpice Model 2N6039
Saber Model 2N6039
Spice2 Model 2N6039
Spice3 Model 2N6039
TO-225 2N5657