2N6287: 20 A, 100 V PNP Darlington Bipolar Power Transistor

The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.

Features
  • High DC Current Gain @ IC = 10 Adc hFE = 2400 (Typ) - 2N6284 hFE = 4000 (Typ) - 2N6287
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6287.LIB (1.0kB)0
Saber Model2N6287.SIN (1.0kB)0
Spice2 Model2N6287.SP2 (1.0kB)0
Spice3 Model2N6287.SP3 (1.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Darlington Complementary Silicon Power Transistors2N6284/D (135.0kB)4
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
2N6287GActivePb-freeTO-204-21-07NATray Foam100$2.0879
Specifications
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6287GPNP2010020.75184
Darlington Complementary Silicon Power Transistors (135.0kB) 2N6287
PSpice Model 2N6287
Saber Model 2N6287
Spice2 Model 2N6287
Spice3 Model 2N6287
TO-204 (TO-3) 2N6341