2N6667: 10 A, 60 V PNP Darlington Bipolar Power Transistor

The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.

Features
  • High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc
  • Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic
Packages
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6667.LIB (1.0kB)0
Saber Model2N6667.SIN (1.0kB)0
Spice2 Model2N6667.SP2 (1.0kB)0
Spice3 Model2N6667.SP3 (1.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Darlington Silicon Power Transistors2N6667/D (113kB)8Nov, 2014
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
2N6667GActivePb-freeTO-220-3221A-09NATube50$0.4533
2N6667Last ShipmentsTO-220-3221A-09NATube50
Specifications
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6667GPNP1060212020
Darlington Silicon Power Transistors (113kB) 2N6667
PSpice Model 2N6667
Saber Model 2N6667
Spice2 Model 2N6667
Spice3 Model 2N6667
TO-220 3 LEAD STANDARD NTP6412AN