BDX33C: 10 A, 100 V NPN Darlington Bipolar Power Transistor
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
Features- High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
- Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
- Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
- Monolithic Construction with Build-In Base-Emitter Shunt resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
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Packages
Simulation Models (4)
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| BDX33CG | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.4307 |
| BDX33C | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
Specifications
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| BDX33CG | NPN | 10 | 100 | 2.5 | 0.75 | - | - |
