BDX53C: Medium Power NPN Darlington Bipolar Power Transistor
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Features- High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage @ 100 mAdcVCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
- Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
|
Packages
Simulation Models (4)
Package Drawings (1)
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| BDX53CG | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.4307 |
| BDX53C | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
Specifications
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| BDX53CG | NPN | 8 | 100 | 2 | 0.75 | - | - |
