MJ11012: 30 A, 60 V NPN Darlington Bipolar Power Transistor

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.

Features
  • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJ11012.LIB (1.0kB)0
Saber ModelMJ11012.SIN (1.0kB)0
Spice2 ModelMJ11012.SP2 (1.0kB)0
Spice3 ModelMJ11012.SP3 (1.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
High-Current Complementary Silicon TransistorsMJ11012/D (115.0kB)5
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
MJ11012GActivePb-freeTO-204-21-07NATray Foam100$2.2493
Specifications
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
MJ11012GNPN306031-4
High-Current Complementary Silicon Transistors (115.0kB) MJ11016
PSpice Model MJ11012
Saber Model MJ11012
Spice2 Model MJ11012
Spice3 Model MJ11012
TO-204 (TO-3) 2N6341