MJ11015: 30 A, 120 V PNP Darlington Bipolar Power Transistor
The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.
Features- High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
- Monolithic Construction with Built-in Base Emitter Shunt Resistor
- Junction Temperature to +200°C
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Simulation Models (4)
Package Drawings (1)
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| MJ11015G | Active | Pb-free | TO-204-2 | 1-07 | NA | Tray Foam | 100 | $2.0879 |
Specifications
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| MJ11015G | PNP | 30 | 120 | 3 | 1 | - | 4 |
