MJ11033: 50 A, 120 V PNP Darlington Bipolar Power Transistor

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
  • High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJ11033.LIB (1.0kB)0
Saber ModelMJ11033.SIN (1.0kB)0
Spice2 ModelMJ11033.SP2 (1.0kB)0
Spice3 ModelMJ11033.SP3 (1.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)197A-05 (3.2kB)
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
High-Current Complementary Silicon TransistorsMJ11028/D (116.0kB)6
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
MJ11033GActivePb-freeTO-204-2 / TO-3-2197A-05NATray Foam100$5.4877
Specifications
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
MJ11033GPNP501202.5118-
High-Current Complementary Silicon Transistors (116.0kB) MJ11033
PSpice Model MJ11033
Saber Model MJ11033
Spice2 Model MJ11033
Spice3 Model MJ11033
TO-204 (TO-3) 2N5686