SiC Power Module - BSM180D12P3C007
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
|
| BSM180D12P3C007 | Active | C | 12 | 12 | Tray | Yes |
BSM180D12P3C007 Data Sheet
Specifications| Drain-source Voltage[V] | 1200 | | Drain Current[A] | 180.0 | | Total Power Dissipation[W] | 880 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -40 | | Storage Temperature (Max.)[°C] | 125 |
| Technical DocumentsFeatures- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Pin Configuration |
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