SiC Power Module - BSM180D12P3C007

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
BSM180D12P3C007ActiveC1212TrayYes

BSM180D12P3C007 Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain Current[A]180.0
Total Power Dissipation[W]880
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
Technical Documents
Features
  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.
Pin Configuration
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使用手册 SCS240KE2
NE 手册系列 SCS240KE2
产品目录 SCS240KE2