650V 4A Field Stop Trench IGBT - RGT8NS65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| RGT8NS65DGTL | Active | LPDS | 1000 | 1000 | Taping | Yes |
RGT8NS65D Data Sheet
Specifications| VCES [V] | 650 | | IC(100°C)[A] | 4 | | VCE(sat) (Typ.) [V] | 1.65 | | tsc(Min.) [us] | 5 | | Built-in Diode | FRD | | Pd [W] | 65 | | VGE(th) (Min.)[V] | 5.0 | | BVCES (Min.)[V] | 650 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical Documents |
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