2STC4468：High power NPN epitaxial planar bipolar transistor
This device is an NPN transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages.
Key Features
- High breakdown voltage VCEO = 140 V
- Complementary to 2STA1695
- Typical ft = 20 MHz
- Fully characterized at 125 °C
Product Specifications
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| 2STC4468 | TO-3P | Tube | - | - | NEC | EAR99 | - |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| 2STC4468 | TO-3P | Industrial | Ecopack1 | |
