2STC4468:High power NPN epitaxial planar bipolar transistor

This device is an NPN transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages.

Key Features

  • High breakdown voltage VCEO = 140 V
  • Complementary to 2STA1695
  • Typical ft = 20 MHz
  • Fully characterized at 125 °C
Product Specifications
DescriptionVersionSize
DS5326: High power NPN epitaxial planar bipolar transistor3.2200 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
2STC4468TO-3PTube--NECEAR99-
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
2STC4468TO-3PIndustrialEcopack1
High power NPN epitaxial planar bipolar transistor 2STC4468