STAC9200:200W 32V HF to 1.3GHz LDMOS transistor in STAC package

The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC® package technology.

Key Features

  • Improved ruggedness: V(BR)DSS > 80 V
  • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10%
  • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz
  • In compliance with the 2002/95/EC European directive
  • ST air-cavity STAC® packaging technology
Product Specifications
DescriptionVersionSize
DS9997: 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package3.0443 KB
Application Notes
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
STAC9200--STAC244BLoose PieceNECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STAC9200STAC244BIndustrialEcopack1
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package STAC9200
PowerSO-10RF: the first true RF power SMD package PD54003-E