STAC9200：200W 32V HF to 1.3GHz LDMOS transistor in STAC package
The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC® package technology.
Key Features
- Improved ruggedness: V(BR)DSS
> 80 V
- Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10%
- POUT
= 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC®
packaging technology
Product Specifications
Application Notes
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STAC9200 | - | - | STAC244B | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STAC9200 | STAC244B | Industrial | Ecopack1 | |
