BD679:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
Product Specifications
DescriptionVersionSize
DS0882: Complementary power Darlington transistors5.2377 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BD679SOT-32Tube0.1811000NECEAR99INDIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
BD679SOT-32IndustrialEcopack1md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.pdf
md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.xml
Complementary power Darlington transistors BD678
md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.pdf BD677
md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.xml BD677