BD682:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
Product Specifications
DescriptionVersionSize
DS0882: Complementary power Darlington transistors5.2377 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BD682SOT-32Tube0.2021000NECEAR99INDIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
BD682SOT-32IndustrialEcopack1
Complementary power Darlington transistors BD678