LET20045C：45W 28V 2GHz LDMOS TRANSISTOR
The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT
(@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
- POUT
(@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
Product Specifications
Application Notes
Presentations
Flyers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET20045C | 1000 | 54.99 | M243 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET20045C | M243 | Industrial | Ecopack1 | |
