M48T201V:5.0 or 3.3 V TIMEKEEPER® supervisor

The M48T201Y/V are self-contained devices that include a real time clock (RTC), programmable alarms, a watchdog timer, and a square wave output which provides control of up to 512 K x 8 of external low-power static RAM. Access to all RTC functions and the external RAM is the same as conventional bytewide SRAM. The 16 TIMEKEEPER® registers offer year, month, date, day, hour, minute, second, calibration, alarm, century, watchdog, and square wave output data. Externally attached static RAMs are controlled by the M48T201Y/V via the GCON and ECON signals.

The 44-pin, 330 mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT® housing containing the battery and crystal. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process.

Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion. The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form. For the 44-lead SOIC, the battery/crystal package (e.g. SNAPHAT) part number is M4Txx-BR12SH (see Table 19 on page 33).

Key Features

  • SOIC package provides direct connection for a SNAPHAT® top which contains the battery and crystal
  • Packaging includes a 44-lead SOIC and SNAPHAT® top (to be ordered separately)
  • RoHS compliantLead-free second level interconnect
  • Microprocessor power-on reset (valid even during battery back-up mode.)
  • Choice of write protect voltagesM48T201Y: VCC = 4.5 to 5.5V 4.1V≤VPFD ≤4.5V\t\tM48T201V: VCC = 3.0 to 3.6V 2.7V≤VPFD ≤3.0V\t\t
  • Converts low power SRAM into NVRAMs
  • Battery low flag
  • Year 2000 compliant
  • Watchdog timer
  • Programmable alarm output active in the battery backed-up mode
  • Integrated real time clock, power-fail control circuit, battery and crystal
Product Specifications
DescriptionVersionSize
DS1317: 5.0 or 3.3 V TIMEKEEPER® supervisor7.1303 KB
Application Notes
DescriptionVersionSize
AN1011: Battery technology used in NVRAM and real-time clock (RTC) products from ST4.0248 KB
AN934: How to use the digital calibration feature in TIMEKEEPER® and serial real-time clock (RTC) products4.1123 KB
AN1216: Implementing a periodic alarm with TIMEKEEPER® and serial real-time clocks (RTCs)2.0192 KB
AN4641: Integrating TIMEKEEPER® and real-time clock supervisor functions1.0479 KB
AN923: Managing century information using serial real-time clocks and TIMEKEEPER® NVRAMs4.0142 KB
AN1012: Predicting the battery life and data retention period of NVRAMs and serial RTCs4.1439 KB
AN1000: Reduced footprint ZEROPOWER® and TIMEKEEPER® supervisor surface-mount solution2.062 KB
AN925: Time update in ST's TIMEKEEPER® devices2.0119 KB
HW Model & CAD Libraries
DescriptionVersionSize
Ibis model1.026 KB
Product Certifications
DescriptionVersionSize
Products Underwriter Laboratories (UL) Information2.1543 KB
Sample & Buy
Part NumberPackagePacking TypeQuantityECCN (EU)ECCN (US)Country of Origin
M48T201V-85MH1FSO-44Tape And Reel1000NECEAR99MALAYSIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
M48T201V-85MH1FSO-44IndustrialEcopack1
5.0 or 3.3 V TIMEKEEPER® supervisor M48T201V
circuit_diagram_5715_thumbnail.png M48T201V
ST NVRAM 和实时时钟(RTC)产品中使用的电池技术 M4Z28-BR00SH
How to use the digital calibration feature in TIMEKEEPER® and serial real-time clock (RTC) products M41T60
Implementing a periodic alarm with TIMEKEEPER® and serial real-time clocks (RTCs) M41T94
集成TIMEKEEPER® 与实时时钟监控器功能 M41T60
Managing century information using serial real-time clocks and TIMEKEEPER® NVRAMs M41T60
预测NVRAM 和串行RTC 的电池寿命和数据保存期限 M4Z28-BR00SH
Reduced footprint ZEROPOWER® and TIMEKEEPER® supervisor surface-mount solution M48T201V
Time update in ST's TIMEKEEPER® devices M48T37Y
Time update in ST's TIMEKEEPER® devices M48T201V
Predicting the battery life and data retention period of NVRAMs and serial RTCs M4Z28-BR00SH