MJD117：COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration.

Key Features

Good hFE linearity
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
High fT frequency

Description	Version	Size
DS0776: Complementary power Darlington transistors	3.2	379 KB

Part Number	Package	Packing Type	Unit Price (US$) *	Quantity	ECCN (EU)	ECCN (US)	Country of Origin
MJD117T4	DPAK	Tape And Reel	0.25	500	NEC	EAR99	CHINA

Part Number	Package	Grade	RoHS Compliance Grade	Material Declaration**
MJD117T4	DPAK	Industrial	Ecopack2 (**)