MJD31C:Low voltage NPN power transistor
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Key Features
- Surface-mounting TO-252 power package in tape and reel
- Complementary to the PNP type MJD32C
Product Specifications
Technical Notes & Articles
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
MJD31CT4 | DPAK | Tape And Reel | 0.229 | 500 | NEC | EAR99 | CHINA |
Quality & Reliability